Power MOSFETs PolarHTTM & PolarHVTM Series (Fast Body Diode) 81 Q2-Class HiPerFETsTM 88 Standard N-channel & Depletion-Mode Types 89 P-channel &

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1 IXYS Power MOSFETs PolarHTTM & PolarHVTM Series (Fast Body Diode) 81 Q2-Class HiPerFETsTM 88 Standard N-channel & Depletion-Mode Types 89 P-channel & Linear Types 90 CoolMOSTM Types 91 Trench Gate Power Types 91 MOSFET Modules 94 Trench MOSFET Modules 95

2 Power MOSFETs and MOSFET Modules PolarHT TM and PolarHV TM MOSFETs for very low R DS(on) PolarHT TM and PolarHV TM MOSFETs feature a proprietary cell design and processing that has resulted in a MOSFET with a 30% reduction in R DS(on) per unit area along with a decrease in gate charge. IXYS has also reduced the wafer thickness, which substantially reduces thermal resistance. The combination of lower R DS(on), lower gate charge and higher power dissipation capability has resulted in a new family of MOSFETs, which will increase the cost effectiveness in SMPS applications. PolarHT TM and PolarHV TM HiPerFETs with very low R DS(on), very low and fast Body Diode IXYS's PolarHT TM and PolarHV TM HiPerFETs combine the strengths of PolarHT family with a faster body diode, whose is reduced to make them suitable for phase-shift bridges, motor control and Uninterruptible Power Supply applications (UPS). So here is a win-win situation with lowest R DS(on), low, very low and a faster body diode. HiPerFET TM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a broad range of power switching applications. This class of Power MOSFET uses IXYS' HDMOS process, which improves the ruggedness of the MOSFET while reducing the reverse recovery time of the fast intrinsic diode to 250 ns or less at elevated (150 C) junction temperature even for high V DSS rated parts. The performance of the fast intrinsic diode is comparable to discrete high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET. Q2 - Class HiPerFET TM MOSFETs for lower gate charge and faster switching New Q2 - class HiPerFET MOSFETs (identified by the suffix letter Q2) are the result of a revolutionary new chip design, which decreases the MOSFET s total gate charge and the Miller capacitance C rss, while maintaining the ruggedness and fast switching intrinsic diode of the company s current HiPerFET product line. The result is a MOSFET with dramatically improved switching efficiencies and thus enabling higher frequency operation and smaller power supplies. is a trademark of Infineon Technologies The Q2-Class line combines the low gate charge advantages with a doublemetal construction resulting in a new generation of MOSFETs with an intrinsic gate resistance an order of magnitude lower than conventional MOSFETs. The resulting reduction in switching losses allows large MOSFETs to operate satisfactorily up to the multi-megahertz region. Standard and MegaMOS TM FETs The IXYS family of high voltage N- Channel Power MOSFETs are designed to provide superior performance and ruggedness in high voltage switching applications. Major improvements are continuing to be made using high-cell density designs processed on thin silicon wafers for lower thermal resistance. The MegaMOS TM FET family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. Depletion Mode MOSFETs Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, requires a nagative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET characteristics. Their R DS(on) and breakdown voltage have a positive temperature coefficient, increasing the gate bias voltage increases the gate channel conductivity and so decreases R DS(on) to some extent and there is a usable intrinsic diode. There are many applications in which Depletion Mode MOSFETs can be used: current regulators, off-line linear regulators, input transient voltage suppressors, input current inrush limiters, solid state relays etc. P-Channel MOSFETs For applications requiring load to be connected to ground/common, it is very convenient to use P-Channel MOSFETs. IXYS has a wide range of high current, high Voltage P-Channel MOSFETs which find variety of applications in complementary output stage of Totem Pole output stages, Buck Converters and those configurations, in which load must be connected between Source of MOSFET and ground/common terminals. Linear Power MOSFETs In some applications, customers need square SOA characteristics, while operating MOSFETs with simultaneous presence of V DS and. IXYS Linear MOSFETs are very rugged to make this possible. Typical applications for these MOSFETs are constant current regulators and electronic loads. CoolMOS Power MOSFETs The specific resistance of a conventional designed MOSFET increases by more than the square of its blocking voltage. For CoolMOS FETs, this relation can be reduced to a linear function making it possible to achieve extremely low onresistances at high breakdown voltages and small chip sizes. IXYS offers CoolMOS performance in the industry standard SOT-227 package as well as the isolated packages: ISOPLUS247, ISOPLUS220 and ISOPLUS i4-pac These isolated packages are also available in many MOSFET types affording greater convenience and safety. Due to their internal DCB isolation, these devices simplify assembly and provide lower thermal resistance from junction to heatsink compared to external isolation materials. Together with the low R DS(on), the junction temperature could be significantly reduced, improving efficiency and reliability. At the same case temperature, the die can control higher currents, saving space and costs by utilizing a smaller number of components. CoolMOS devices are avalanche rated, guaranteeing rugged operation. Trench Gate Power MOSFETs IXYS Trench Power MOSFETS are ideally suited for low voltage/ high current applications. These MOSFETs feature an exceedingly low R DS(on), thus guaranteeing very low power dissipation in low voltage, high current power switching applications. This, combined with wide ranging operating junction temperature from C to C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. IXYS has currently a wide portfolio of Trench Gate MOSFETs with raings from 55V to 300V and 42A to 220A. By optimization of several parameters, IXYS Corporation has come out with special higher Voltage rated Trench Gate MOSFETs for critical applications. Likewise, special Trench Gate MOSFET modules find variety of applications in very demanding Automotive segments. 81

3 PolarHT TM N-Channel Power MOSFETs Low Voltage Types IXTP110N055P * IXTA110N055P 110* IXTQ110N055P 110* X017a IXTQ150N06P * X017a IXTQ200N06P 200* X017a IXTP75N10P IXTA75N10P IXTQ75N10P X017a IXTQ110N10P 110* X017a IXTT110N10P 110* IXTQ140N10P 140* X017a IXTT140N10P 140* IXTQ170N10P 170* X017a IXTT170N10P 170* IXTK170N10P 170* IXTK200N10P 200* IXTR200N10P 120* X016a IXTP62N15P IXTA62N15P IXTQ62N15P X017a IXTQ96N15P 96* X017a IXTT96N15P 96* IXTQ120N15P 120* X017a IXTT120N15P 120* IXTQ150N15P 150* X017a IXTK150N15P 150* IXTK180N15P 180* IXTP50N20P IXTP50N20PM X007a IXTA50N20P IXTQ50N20P X017a IXTQ74N20P X017a IXTT74N20P IXTQ96N20P 96* X017a IXTH96N20P 96* IXTT96N20P 96* IXTQ120N20P 120* X017a IXTK120N20P 120* IXTK140N20P 140* IXTP42N25P IXTA42N25P IXTQ42N25P X017a IXTQ64N25P X017a IXTT64N25P IXTQ82N25P X017a IXTT82N25P 82* IXTK82N25P 82* IXTQ100N25P 100* X017a IXTK100N25P IXTT100N25P 100* IXTK120N25P 120* IXTP36N30P IXTA36N30P IXTQ36N30P X017a IXTQ52N30P X017a IXTT52N30P IXTQ69N30P X017a IXTT69N30P IXTQ88N30P 88* X017a IXTH88N30P 88* IXTK88N30P IXTT88N30P 88* IXTK102N30P 102* Note * - Drain and source currents may be limited by external package leads. Note: Performance and availability are subject to change at IXYS discretion. 82 X007a X016a ISOPLUS247 TM DCB isolated package X017a FP TO-3P

4 PolarHV TM Power MOSFETs High Voltage Types New V A Ω pf nc ns K/W W IXTY1R6N50P X004 IXTP1R6N50P IXTY2R4N50P X004 IXTP2R4N50P IXTY3N50P X004 IXTP3N50P IXTA3N50P IXTY5N50P X004 IXTP5N50P IXTA5N50P IXTP6N50P IXTA6N50P IXTA8N50P IXTP8N50P IXTP8N50PM X007a IXTI12N50P X008 IXTP12N50P IXTP12N50PM X007a IXTP16N50P IXTA16N50P IXTQ16N50P X017a IXTV22N50P X009 IXTV22N50PS X013 IXTQ22N50P X017a IXTH22N50P IXTV26N50P X009 IXTV26N50PS X013 IXTQ26N50P X017a IXTT26N50P IXTC26N50P X010a IXTV30N50P X009 IXTV30N50PS X013 IXTH30N50P IXTQ30N50P X017a IXTT30N50P IXTV36N50P X009 IXTV36N50PS X013 IXTH36N50P IXTQ36N50P X017a IXTT36N50P IXTQ44N50P X017a IXTU1R4N60P X003 IXTP1R4N60P IXTY1R4N60P X004 IXTP2N60P IXTY2N60P X004 IXTY3N60P X004 IXTP3N60P IXTA3N60P IXTP4N60P IXTA4N60P IXTP5N60P IXTA5N60P IXTA7N60P IXTP7N60P IXTA10N60P IXTI10N60P X008 IXTP10N60P IXTP10N60PM X007a IXTP14N60P IXTA14N60P IXTQ14N60P X017a IXTV18N60P X009 Note: Performance and availability are subject to change at IXYS discretion. X003 X004 X007a X008 X009 X010a X013 X017a TO-251AA TO-252 AA FP TO-262 i2-pac PLUS220 ISOPLUS220 TM PLUS220 SMD TO-3P 83

5 PolarHV TM Power MOSFETs High Voltage Types New V A Ω pf nc ns K/W W IXTV18N60PS X013 IXTQ18N60P X017a IXTV22N60P X009 IXTV22N60PS X013 IXTQ22N60P X017a IXTV26N60P X009 IXTV26N60PS X013 IXTH26N60P IXTQ26N60P X017a IXTT26N60P IXTV30N60P X009 IXTV30N60PS X013 IXTH30N60P IXTQ30N60P X017a IXTT30N60P IXTA2N80P IXTP2N80P IXTY2N80P X004 IXTA4N80P IXTP4N80P Note: Performance and availability are subject to change at IXYS discretion. PolarHT TM HiPerFET with Fast Intrinsic Diode Low Voltage Types X004 X009 X010a X013 TO-252AA PLUS220 ISOPLUS220 TM PLUS220 SMD IXFH110N10P * IXFV110N10P 110* X009 IXFV110N10PS 110* X013 IXFC110N10P 66* X010a IXFH140N10P 140* IXFT140N10P 140* IXFH170N10P 170* IXFK170N10P 170* IXFK200N10P 200* IXFX200N10P 200* X015 IXFR200N10P 133* X016a IXFN200N10P 200* X027a IXFH96N15P * IXFV96N15P 96* X009 IXFV96N15PS 96* X013 IXFC96N15P X010a IXFH120N15P 120* IXFT120N15P 120* IXFH150N15P 150* IXFK150N15P 150* IXFK180N15P 180* IXFR180N15P 94* X016a IXFN180N15P 180* X027a IXFX180N15P 180* X015 IXFH74N20P IXFV74N20P 74* X009 IXFV74N20PS 74* X013 IXFC74N20P X010a IXFH96N20P 96* IXFT96N20P 96* IXFV96N20P 96* X009 Note 1 - performance and availability are subject to change at the discretion of IXYS Note 2. * - Drain and source currents may be limited by external package leads. 84 X015 X016a X017a PLUS247 ISOPLUS247 TM TO-3P X027a SOT-227B minibloc Weight = 30 g

6 PolarHT TM HiPerFET with Fast Intrinsic Diode Low Voltage Types IXFH120N20P * IXFK120N20P 120* IXFK140N20P 140* IXFR140N20P 90* X016a IXFN140N20P 140* X027a IXFH100N25P * IXFX120N25P 120* X015 IXFK120N25P 120* IXFH52N30P IXFV52N30P X009 IXFV52N30PS X013 IXFC52N30P X010a IXFH69N30P IXFT69N30P IXFH88N30P IXFK88N30P IXFK102N30P 102* IXFR102N30P X016a IXFN102N30P 102* X027a IXFK140N30P 140* IXFN140N30P 140* X027a IXFR140N30P 82* X016a IXFX140N30P 140* X015 PolarHV TM HiPerFETs with Fast Intrinsic Diode High Voltage Types X007a X009 X010a X013 FP PLUS220 ISOPLUS220 TM PLUS220 SMD IXFP3N50PM X007a IXFP5N50PM X007a IXFP8N50PM X007a IXFP12N50P IXFA12N50P IXFP12N50PM X007a IXFP16N50P IXFA16N50P IXFH16N50P IXFC16N50P X010a IXFV22N50P X009 IXFV22N50PS X013 IXFH22N50P IXFV26N50P X009 IXFV26N50PS X013 IXFH26N50P IXFC26N50P X010a IXFV30N50P X009 IXFV30N50PS X013 IXFH30N50P IXFT30N50P IXFV36N50P X009 IXFV36N50PS X013 IXFH36N50P IXFT36N50P IXFC36N50P X010a IXFR36N50P X016a IXFH44N50P IXFT44N50P IXFK44N50P Note 1 - performance and availability are subject to change at the discretion of IXYS Note 2. * - Drain and source currents may be limited by external package leads. X015 X016a X027a Weight = 30 g PLUS247 ISOPLUS247 TM SOT-227B minibloc 85

7 PolarHV TM HiPerFETs with Fast Intrinsic Diode High Voltage Types IXFR44N50P X016a IXFX64N50P X015 IXFK64N50P IXFR64N50P X016a IXFN64N50P X027a IXFN64N50PD2** X027a IXFX80N50P X015 IXFR80N50P X016a IXFK80N50P IXFN80N50P X027a IXFB100N50P X021 IXFL100N50P X022 IXFN100N50P X027a IXFP10N60P IXFA10N60P IXFP14N60P IXFA14N60P IXFH14N60P IXFC14N60P X010a IXFV18N60P X009 IXFV18N60PS X013 IXFH18N60P IXFV22N60P X009 IXFV22N60PS X013 IXFH22N60P IXFC22N60P X010a IXFV26N60P X009 IXFV26N60PS X013 IXFH26N60P IXFT26N60P IXFV30N60P X009 IXFV30N60PS X013 IXFH30N60P IXFT30N60P IXFC30N60P X010a IXFR30N60P X016a IXFH36N60P IXFT36N60P IXFK36N60P IXFR36N60P X016a IXFX48N60P X015 IXFK48N60P IXFR48N60P X016a IXFN48N60P X027a IXFK64N60P IXFN64N60P X027a IXFR64N60P X016a IXFX64N60P X015 IXFB82N60P X021 IXFL82N60P X022 IXFN82N60P X027a X008 X009 X010a X013 X015 X016a X017a TO-262 i2-pac PLUS220 ISOPLUS220 TM PLUS220 SMD PLUS247 ISOPLUS247 TM TO-3P X027a Weight = 30 g SOT-227B minibloc X022 ISOPLUS264 X021 PLUS264 Note 1. Performance and availability are subject to change at the discretion of IXYS Note 2. ** - MOSFET and FRED diode chips connected in boost configuration. 86

8 PolarHV TM HiPerFETs with Fast Intrinsic Diodes High Voltage Types IXFA7N80P IXFI7N80P X008 IXFP7N80P IXFP7N80PM X007a IXFA10N80P IXFC10N80P X010a IXFH10N80P IXFP10N80P IXFQ10N80P X017a IXFC12N80P X010a IXFH12N80P IXFQ12N80P X017a IXFV12N80P X009 IXFV12N80PS X013 IXFC14N80P X010a IXFH14N80P IXFQ14N80P X017a IXFT14N80P IXFV14N80P X009 IXFV14N80PS X013 IXFC16N80P X010a IXFH16N80P IXFT16N80P IXFV16N80P X009 IXFV16N80PS X013 IXFC20N80P X010a IXFH20N80P IXFR20N80P X016a IXFT20N80P IXFV20N80P X009 IXFV20N80PS X013 IXFH24N80P IXFK24N80P IXFR24N80P X016a IXFT24N80P IXFK32N80P IXFN32N80P X027a IXFR32N80P X016a IXFX32N80P X015 IXFK44N80P IXFN44N80P X027a IXFR44N80P X016a IXFX44N80P X015 IXFB60N80P X021 IXFL60N80P X022 IXFN60N80P X027a X021 PLUS264 X007a X008 X009 X010a X013 X015 X016a FP TO-262 i2-pac PLUS220 ISOPLUS220 TM PLUS220 SMD PLUS247 ISOPLUS247 TM X027a Weight = 30 g SOT-227B minibloc X022 ISOPLUS264 X017a TO-3P Note 1 - performance and availability are subject to change at the discretion of IXYS 87

9 HiPerFET TM Power MOSFETs with Fast Intrinsic Diode G D S V A Ω pf nc ns K/W W IXFN180N * X027a IXFK180N07 180* IXFX180N07 180* X015 IXFN340N07 340* X027a IXFN280N X027a IXFX180N * X015 IXFK180N10 180* IXFN180N10 180* X027a IXFN230N10 230* X027a IXFH4N100Q IXFA4N100Q IXFP4N100Q IXFT4N100Q IXFR4N100Q X016a IXFX24N X015 IXFK24N IXFN24N X027a IXFN34N X027a IXFL34N X022 IXFN36N X027a IXFP3N IXFA3N Note 1. * - Drain and source currents may be limited by external package leads. X015 X016a PLUS247 ISOPLUS247 TM Q2-Class HiPerFET TM with Fast Intrinsic Diode Very High Speed IXFR40N50Q X016a IXFH40N50Q IXFR66N50Q X016a IXFN66N50Q X027a IXFK66N50Q IXFX66N50Q X015 IXFB80N50Q X021 IXFN80N50Q X027a IXFF80N50Q X024c IXFL80N50Q X022 IXFX60N55Q X015 IXFK60N55Q IXFB72N55Q X021 IXFN72N55Q X027a IXFK52N60Q IXFX52N60Q X015 IXFN70N60Q X027a IXFB70N60Q X021 IXFR38N80Q X016a IXFK38N80Q IXFX38N80Q X015 IXFB50N80Q X021 IXFN50N80Q X027a IXFR14N100Q X016a IXFH14N100Q IXFK30N100Q IXFX30N100Q X015 IXFN38N100Q X027a IXFL38N100Q X022 IXFB38N100Q X021 X021 X022 X024c PLUS264 ISOPLUS264 TM ISOPLUS i4-pac TM X027a SOT-227B minibloc Weight = 30 g 88

10 Standard N-Channel Power MOSFETs IXTK250N * IXTY01N X004 IXTU01N X003 IXTY1N X004 IXTP1N IXTA1N IXTP2N IXTA2N IXTU01N X003 IXTY01N X004 IXTA05N IXTP05N IXTT1N IXTH1N IXTA1N IXTP1N IXTP2N IXTP3N IXTA3N IXTH3N IXTT6N IXTH6N IXTH12N X003 X004 TO-251AA TO-252AA Note 1. * - Drain and source currents may be limited by external package leads N-Channel Depletion-Mode Power MOSFETs Normally On MOSFETs V GS (off) C rss max max max max typ typ max V GS = 0 V New V A Ω V pf pf K/W W IXTY02N50D X004 IXTU02N50D X003 IXTP02N50D IXTH20N50D IXTT20N50D IXTY01N100D X004 IXTU01N100D X003 IXTP01N100D IXTH10N100D IXTT10N100D

11 P-Channel Power MOSFETs G D S max max max typ typ typ max New V A Ω pf nc ns K/W W IXTH50P IXTH36P IXTH50P IXTT50P IXTH16P IXTH24P IXTT24P IXTH8P IXTT8P IXTH11P IXTT11P IXTH10P Linear Power MOSFETs High Voltage SOA IXTH24N50L IXTN46N50L X027a IXTK46N50L IXTX46N50L X015 IXTB62N50L X021 IXTN62N50L X027a IXTH12N100L IXTX22N100L X015 IXTK22N100L IXTN22N100L X027a IXTB30N100L X021 IXTN30N100L X027a X015 PLUS247 X021 PLUS264 X027a Weight = 30 g SOT-227B minibloc 90

12 CoolMOS Power MOSFETs CoolMOS is a trademark of Infineon Technologies K Series - CoolMOS Type V DSS Q G V isol max. typ. max. RMS = 25 C T J = 25 C New V A Ω nc K/W V IXKC20N60C X010a IXKC40N60C X010a IXKP35N60C IXKH35N60C IXKR40N60C X016a IXKN40N60C X027a IXKH47N60C IXKH70N60C IXKN75N60C X027a IXKK85N60C 85* IXKC13N80C X010a IXKC25N80C X010a IXKR25N80C X016a IXKN45N80C X027a Notes: * Silicon chip current rating. Fig. No. page X009 X010a ISOPLUS220 TM X013 Weight = 4 g PLUS220 TM PLUS220 SMD CoolMOS configurations in i4-package FMD FDM IXKF Type V DSS (cont) R DSon Q G Config. max. typ. max. = 25 C T J = 25 C New V A Ω nc K/W IXKF40N60SCD single X024c FMD25-06KC under development boost X024a FMD25-06KC5SiC boost, SiC X024a FMD40-06KC boost X024a FMD40-06KC boost X024a FDM25-06KC buck X024a under development FDM25-06KC5SiC buck, SiC X024a FDM40-06KC buck X024a Trench Gate Power MOSFETs U Series X016a ISOPLUS247 TM X024a ISOPLUS i4-pac TM Type V DSS typ Q G(on) Max. = 25 C = 25 C typ typ. New V A m Ω nc ns W IXUC100N * X010a IXUC200N * X010a IXUC160N * X010a IXUV170N * X009 IXUV170N075S 175 * X013 IXUC60N * X010a IXUC120N * X010a IXUN280N * X027a IXUN350N * X027a X024c ISOPLUS i4-pac TM X027a SOT-227B Weight = 30 g minibloc Notes: * Drain and source currents may be limited by external package leads More Trench Gate MOSFETs are shown in the MOSFET Modules table and the table on the following page. 91

13 Trench Gate Power MOSFETs Very Low R DS(on) New V A Ω pf nc ns K/W W IXTP64N055T IXTU64N055T 64* X003 IXTY64N055T 64* X004 IXTP90N055T 90* IXTU90N055T 90* X003 IXTY90N055T 90* X004 IXTA110N055T 110* IXTA110N055T7 110* X012b IXTP110N055T 110* IXTA182N055T 182* IXTA182N055T7 182* X012b IXTP182N055T 182* IXTQ182N055T 182* X017a IXTA220N055T 220* IXTA220N055T7 220* X012b IXTP220N055T 220* IXTQ220N055T 220* X017a IXTA240N055T 240* IXTA240N055T7 240* X012b IXTC240N055T 140* X010a IXTQ240N055T 240* X017a IXTP240N055T 240* IXTC280N055T 164* X010a IXTH280N055T 280* IXTQ280N055T 280* X017a IXTV280N055T 280* X009 IXTV280N055TS 280* X013 IXTP55N075T IXTU55N075T 55* X003 IXTY55N075T 55* X004 IXTP76N075T 76* IXTU76N075T 76* X003 IXTY76N075T 76* X004 IXTA98N075T 98* IXTA98N075T7 98* X012b IXTP98N075T 98* IXTA160N075T 160* IXTA160N075T7 160* X012b IXTP160N075T 160* IXTQ160N075T 160* X017a IXTA200N075T 200* IXTA200N075T7 200* X012b IXTP200N075T 200* IXTQ200N075T 200* X017a IXTA220N075T 220* IXTA220N075T7 220* X012b IXTC220N075T 125* X010a IXTQ220N075T 220* X017a IXTP220N075T 220* IXTC250N075T 150* X010a IXTH250N075T 250* IXTQ250N075T 250* X017a IXTV250N075T 250* X009 IXTV250N075TS 250* X013 IXTP50N085T IXTU50N085T 50* X003 IXTY50N085T 50* X004 IXTP70N085T IXTU70N085T 70* X003 IXTY70N085T 70* X004 IXTA88N085T 88* IXTA88N085T7 88* X012b 92 Note 1. Performance and availability are subject to change at IXYS discretion. Note 2. * - Drain and source currents may be limited by external package leads. X003 X004 X008 X009 X010a X013 X016a X017a TO-251AA TO-251AA TO-262 i2-pac PLUS220 ISOPLUS220 TM PLUS220 SMD ISOPLUS247 TM TO-3P

14 Trench Gate Power MOSFETs Very Low R DS(on) New V A Ω pf nc ns K/W W IXTP88N085T 85 88* IXTA152N085T 152* IXTA152N085T7 152* X012b IXTP152N085T 152* IXTQ152N085T 152* X017a IXTA180N085T 180* IXTA180N085T7 180* X012b IXTP180N085T 180* IXTQ180N085T 180* X017a IXTA200N085T 200* IXTA200N085T7 200* X012b IXTC200N085T 110* X010a IXTQ200N085T 200* X017a IXTP200N085T 200* IXTC230N085T 136* X010a IXTH230N085T 230* IXTQ230N085T 230* X017a IXTV230N085T 230* X009 IXTV230N85TS 230* X013 IXTP44N10T IXTU44N10T 44* X003 IXTY44N10T 44* X004 IXTP60N10T IXTU60N10T 60* X003 IXTY60N10T 60* X004 IXTA80N10T 80* IXTA80N10T7 80* X012b IXTP80N10T 80* IXTA130N10T 130* IXTA130N10T7 130* X012b IXTP130N10T 130* IXTQ130N10T 130* X017a IXTA160N10T 160* IXTA160N10T7 160* X012b IXTP160N10T 160* IXTQ160N10T 160* X017a IXTA180N10T 180* IXTA180N10T7 180* X012b IXTC180N10T 100* X010a IXTQ180N10T 180* X017a IXTP180N10T 180* IXTC200N10T 118* X010a IXTH200N10T 200* IXTQ200N10T 200* X017a IXTV200N10T 200* X009 IXTV200N10TS 200* X013 X003 X004 X008 X009 X010a X012b TO-251AA TO-252AA TO-262 i2-pac PLUS220 ISOPLUS220 TM TO-263(7) Note 1. Performance and availability are subject to change at IXYS discretion. Note 2. * - Drain and source currents may be limited by external package leads. X016a ISOPLUS247 TM X017a TO-3P X013 PLUS220 SMD 93

15 MOSFET Modules VMO single switch VMM phase leg VMK / FMK dual switch VHM H-bridge VKM H-bridge FMM phase leg FMD boost FDM buck N Channel Enhancement Types suffix "F = HiPerFET TM technology with fast intrinsic diode Type V DSS R DSon t f t r Fig. V A A mω ns ns K/W No. = = T J = New 25 C 80 C 25 C single switch modules VMO150-01P X102 VMO550-01F not recommended for new designs X128d VMO650-01F not recommended for new designs X128d VMO F X130d VMO580-02F not recommended for new designs X130d VMO40-05P X102 VMO60-05F not recommended for new designs X125f VMO80-05P X102 FMD21-05QC / 90 C X024a FMD40-06KC * / 90 C X024a FMD25-06KC5 * tbd 100 X024a FMD25-06KC5SiC * under development X024a FMD40-06KC5 * X024a FDM21-05QC / 90 C X024a FDM25-06KC5 * tbd 100 X024a FDM25-06KC5SiC * X024a under development FDM40-06KC5 * X024a Thermistor page X102 ECO-PAC 2 Weight = 24 g See data sheet for pin arrangement X125a/f TO-240 AA Weight = 90 g dual switch modules - common source configuration VMK T not recommended for new designs X125a FMK75-01F / 90 C X024a VMK90-02T not recommended for new designs X125a MOSFET modules - phase leg configuration FMM75-01F / 90 C X024a VMM650-01F / 90 C X130b VMM45-02F X125a not recommended for new designs VMM85-02F X127a VMM300-03F X128a VMM90-09F X130b MOSFET modules - H bridge configuration VHM40-06P / 90 C X102 VKM60-01P VKM40-06P1* MOSFET modules - boost configuration MOSFET modules - buck configuration X127a Weight 150 g X128a/d Weight = 250 g X130b Weight = 250 g X130d Weight = 250 g * CoolMOS is a trademark of Infineon Technologies X024a ISOPLUS i4-pac TM 94

16 MOSFET Modules Trench MOSFET Technology very low R DSon fast body diode GWM, VWM sixpack VMM phase leg FMM phase leg FDM buck Type V DSS R DSon t f t r Fig. V A A mω ns ns K/W No. = = T J = New 25 C 90 C 25 C Phase leg configuration FMM P X024a FMM P X024a FMM P X024a VMM P / 80 C X130a VMM P / 80 C X130a FMM65-015P X024a Sixpack configuration VWM P / 80 C X104 VWM200-01P / 80 C ,26 X104 GWM P3* ,85 X026 GWM P3* X026 GWM P3* ,85 X026 GWM X1* 85 under development X026 GWM70-01P2* / 80 C X026 GWM95-01X1* 100 under development X026 Buck configuration FDM SP X024a Boost configuration FMD SP X024a page X024a X026 Weight = 25 g X104 Weight = 80 g X130a Weight = 250 g ISOPLUS i4-pac TM ISOPLUS-DIL TM See data sheet for pin arrangement * Bent lead and SMD lead version available, refer to ISOPLUS-DIL pages 59/60 95

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